Samsung debuts three next-generation memory technologies for AI data centers — zHBM, zNAND-O, and BV-NAND all rely on advanced wafer bonding technologies

Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure

Samsung unveiled zHBM (memory above AI processor) and V10 BV-NAND (400+ layers), with 8x performance vs HBM5 and 10x memory density. Addresses memory-compute bottleneck in AI training; signals memory bandwidth is the binding constraint for infrastructure scale.