Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure
Samsung introduces industry-first concept models of zHBM and zNAND-O, highlighting leadership in next-generation memory architecture for HPC and AI infrastructure
400-plus-layer V10 BV-NAND with wafer bonding technology revealed for the first time in industry
AI memory roadmap spans next-generation solutions from DRAM to enterprise storage, including HBM4E, HBM5, LPDDR5X-PIM and PM1763
Samsung Electronics Co., Ltd., a global leader in advanced memory technology, today showcased its latest AI memory innovations at Future of Memory and Storage (FMS) 2026 in Santa Clara, California.
