Samsung Electronics introduced its BV-NAND prototype with over 400 layers, enhancing storage density and performance at the FMS conference in California.
Samsung launched V10 Bonding V-NAND with 400+ layers and 58% improved density, plus zHBM/zNAND-O vertically stacking memory on AI processors. Addresses AI infrastructure demand for dense, power-efficient storage with 10x HBM5 density and 50% lower thermal resistance.
The chip has over 400 layers
Aug 05, 2026
01:20 pm
What's the storySamsung Electronics has unveiled a new artificial intelligence (AI) memory technology, the V10 Bonding V-NAND (BV-NAND) prototype.
The announcement was made at this year's Future of Memory and Storage (FMS) conference in Santa Clara, California.
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