Samsung debuts three next-generation memory technologies for AI data centers — zHBM, zNAND-O, and BV-NAND all rely on advanced wafer bonding technologies

(Image credit: Samsung)

This week, Samsung presented its vision for next-generation memory and storage solutions both for AI and general-purpose applications at the Future of Memory and Storage (FMS) 2026 conference. The company introduced zHBM, zNAND-O, and BV-NAND technologies at the event, and while they are aimed at very different applications, they share one common ingredient: they all rely on wafer bonding.Here's a breakdown of each type of technology that the company announced.zHBM: Samsung’s vision for custom HBM ultra-high-performance memory that will sit on top of logic dies.zNAND-O: NAND memory that can be bonded atop a logic device to maximize bandwidth, reduce latency, and minimize power consumption.BV-NAND (aka Samsung’s 10th Generation V-NAND): Samsung’s take on bonding NAND arrays atop all the circuitry needed to operate them. This is essentially next-generation 3D NAND technology that is used today by almost everyone, including Kioxia/Sandisk, SK Hynix, and YMTC (which was the first company to adopt such a method).

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