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Memorie fino a 400 layer e fino a 8 volte le velocità di HBM5. Samsung infiamma il Future Memory and Storage2026

Samsung ha presentato circa 30 nuove soluzioni tra DRAM, NAND e storage enterprise. Tra le novit� figurano le architetture zHBM e zNAND-O, la V10 BV-NAND con oltre 400 layer e nuove soluzioni HBM per i futuri sistemi IA

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Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure

Samsung unveiled zHBM (memory above AI processor) and V10 BV-NAND (400+ layers), with 8x performance vs HBM5 and 10x memory density. Addresses memory-compute bottleneck in AI training; signals memory bandwidth is the binding constraint for infrastructure scale.

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Memorie fino a 400 layer e fino a 8 volte le velocità di HBM5. Samsung infiamma il Future Memory and Storage2026

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Samsung Unveils Next-Gen 3D-Memory Vision at FMS 2026, Charting the Future of AI Infrastructure

Timeline cronologica

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Memorie fino a 400 layer e fino a 8 volte le velocità di HBM5. Samsung infiamma il Future Memory and Storage2026

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