Intel surpasses one million High-NA EUV wafers processed, outpaces the rest of the industry combined — company also trailblazing giant 6×12 photomasks to speed production and lower costs

(Image credit: ASML)

Intel announced on Monday that it had processed more than one million 300-mm wafers using its High-NA EUV scanners, less than two and a half years after its first tool was assembled. For now, the company intends to use industry-standard 6-inch photomasks, which can expose 26×16.5 mm half-fields and therefore require field stitching for larger chips. However, Intel is also working on larger 6×12-inch photomasks that would enable High-NA EUV scanners to expose full 26×33 mm fields without stitching.One million High-NA wafersIntel's one million wafers figure includes wafers processed during tool installation and certification, R&D, and production. Earlier this year, Intel certified using High-NA EUV scanners for its 18A process technology, so right now these tools are used to make some of Intel's Panther Lake processors. Intel currently has two ASML Twinscan EXE:5000 tools and at least one EXE:5200B scanner. As of late February 2025, Intel processes around 30,000 wafers using its High-NA EUV tool, so going from 30,000 wafers by February 2025 to over a million by September 2026 is an enormous increase in cumulative High-NA utilization.Since Intel's fleet expanded from two EXE:5000 systems to three and now includes the much faster EXE:5200B, the million-wafer milestone is really a fleet and process-maturity milestone that Intel has achieved first in the industry. What makes the company's milestone even more important is that ASML announced this April that all of the High-NA EUV scanners shipped by then processed over 500,000 wafers which achieving over 80% availability, which means that Intel has now processed more wafers using High-NA tools than the rest of the industry combined.Sticking to stitchingConventional 0.33-NA EUV has 4X magnification in both directions, enabling the familiar 26×33 mm exposure field with traditional 6-inch photomasks. However, 0.55-NA EUV uses anamorphic 4X/8X magnification, so the same 6×6 mask can provide only approximately 26×16.5 mm on the wafer. As a result, large dies that fit within a conventional 26 × 33 mm EUV field must be exposed as two half-fields using High-NA EUV, which is called stitching. While stitching is a workable near-term solution, it has several drawbacks.