ASML and TSMC plan to transition EUV lithography masks from 6-inch to 12-inch format, targeting 40% productivity gains and full production

Stitching to be used in the near term future with High-NA tools, but larger 6×12 photomasks envisioned.

TSMC and Samsung will adopt ASML’s High NA EUV tools for advanced chipmaking as AI drives demand for smaller, more complex semiconductors.