SK Hynix said it plans to begin volume production of next-generation HBM4E chips at its Indiana facility in the third quarter of 2029, and Chief Executive Kwak Noh-Jung said the memory shortage could last through the end of 2030. The company said the site in West Lafayette is expected to become a key HBM production base in the United States by 2030. The project is part of more than $4 billion in U.S. investment tied to AI-driven demand.
Semiconductor and memory chip company SK Hynix CEO Kwak Noh-Jung attends the company's opening bell ceremony at the Nasdaq market on the day of their IPO in New York City, Jul. 10. Reuters-Yonhap
WEST LAFAYETTE, Indiana — South Korean chipmaker SK Hynix said on Thursday it plans to begin volume production of its next-generation HBM4E chips at its Indiana facility in the third quarter of 2029, as its chief executive said the company expects a current memory chip shortage to persist through the end of 2030.
Chief Executive Kwak Noh-Jung expects the site to eventually reach annual capacity of hundreds of thousands of wafers. The more than $4 billion project marks a major expansion of SK Hynix's U.S. operations as surging investment in artificial intelligence drives demand for high-bandwidth memory, or HBM. The chipmaker seeks to bring production closer to major customers including Nvidia, Microsoft and Alphabet's Google.
