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The South Korean chipmaker is betting its next-generation memory future on a rapid production shift that could overtake Samsung by year's end
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SK Hynix is pushing hard on its sixth-generation 10nm-class DRAM technology, plotting a trajectory that takes 1c DRAM from roughly 13% of its production mix in Q2 2026 to 34% by Q4 2026. 1c DRAM is set to become the foundational technology for SK Hynix’s HBM4E, the next evolution of high-bandwidth memory. Mass production of HBM4E is planned for 2027.
SK Hynix’s 1c DRAM share sat at roughly 10% in Q1 2026. By Q2, with substantial shipments underway, that figure climbed to approximately 13%. The company projects 24% by Q3 2026, then the jump to 34% by Q4.
