Insider Brief
Researchers developed a spin transistor that combines data processing and memory in a single atomically thin device, potentially reducing the energy and performance costs of moving data within AI chips.
The device uses two layers of chromium sulfur bromide and can be switched by either voltage or the relative magnetic orientation of the layers.
Quantum microscopy showed how magnetism and electrical behavior interact in the transistor, which achieved an electrical on/off ratio of 1 million percent and a magnetic ratio of 3,000 percent.
PRESS RELEASE — Artificial intelligence faces an energy crisis, stemming from a physical traffic jam inside modern computer chips.
