Sandisk Announces Sampling of BiCS10 1Tb TLC 3D NAND Flash Memory Pushing Density, Power Efficiency and Performance to Support Data-Intensive Workloads
BiCS10 TLC delivers up to 4.8Gb/s** NAND interface speed, 59 percent bit density improvement compared to BiCS8 and enhanced power efficiency
Sandisk Corporation (Nasdaq: SNDK) today announced it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve industry-leading 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59 percent while delivering up to 4.8Gb/s** interface speed, a 33 percent improvement compared with 8th generation 3D flash memory currently in mass production.
Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10 percent for input and 34 percent for output compared to the previous BiCS8 generation.
“As the world becomes more connected, data-intensive and intelligent, NAND plays an increasingly mission-critical role in delivering the performance, efficiency and scale modern computing requires,” said Alper Ilkbahar, CTO at Sandisk. “BiCS8 set a new benchmark for 3D NAND by combining our wafer bonding capabilities with meaningful gains in density, performance, and efficiency. With BiCS10 TLC, we build upon that proven foundation to deliver faster interface speeds, higher bit density and improved power efficiency for our customers.”
