Kioxia Commences Sample Shipments of 9th-Generation BiCS FLASH™ 1Tb TLC Devices
The New Devices Incorporate Existing Memory Cell and Advanced CMOS Technologies to Achieve High Investment Efficiency
Kioxia Corporation, a world leader in memory solutions, today announced it has commenced sample shipments of 1Tb (terabit) Triple-Level Cell (TLC) memory devices incorporating its 9th-generation BiCS FLASH™ 3D flash memory technology1. The devices are designed to support applications such as AI-enabled PCs and smartphones with low- to mid-level storage capacities that require high performance.
Kioxia continues to pursue a dual-axis strategy based on its innovative CMOS directly Bonded to Array (CBA) technology2 and On-Pitch Select Gate Drain (OPS) technology3. Under its unique dual-axis strategy, Kioxia is simultaneously advancing two distinct product lines: its 9th-generation solutions, which deliver high performance at relatively low cost of investing, and its 10th-generation technology, which leverages advanced layer stacking to achieve massive capacity and superior performance.
The new 9th-generation BiCS FLASH™ 1Tb TLC devices, developed using a 230-layer stacking process based on 8th-generation BiCS FLASH™ technology and advanced CMOS technology, deliver a NAND interface speed of 4.8Gb/s, a 33% improvement over 8th-generation devices, matching the performance of 10th-generation devices4.
