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SKKU Researchers Identify Room-Temperature “Spin Qubit” Defect in Zinc Oxide Semiconductors
The computational workflow of defect candidate search with critical parameters.
An international research team led by Professor Hosung Seo at Sungkyunkwan University (SKKU)—in collaboration with researchers at the University of Wisconsin–Madison and the University of Washington—has computationally identified a novel atomic defect in zinc oxide (ZnO) capable of functioning as a high-fidelity “spin qubit.” Published in PRX Quantum, the findings propose a molybdenum-oxygen-vacancy complex [(MoZnvO)2+] as an optically addressable, deep-level spin-triplet defect. The discovery marks the first time a robust, room-temperature spin qubit has been identified in ZnO, a wide-bandgap semiconductor already deeply integrated into global commercial fabrication processes.
