Japan’s Kioxia, formerly the memory unit of Toshiba, is preparing to manufacture next-generation 3D NAND flash memory at a fabrication plant in northern Japan, at a time when surging demand for data centre products has turned it into the country’s most valuable publicly traded firm.
The company said it held a ceremony at the fab in Kitakami, Iwate prefecture, north of Tokyo, ahead of planned production of 10th-generation BiCS Flash memory, which it developed with California-based SanDisk and announced in February.
The companies said at the time that the product delivers up to 33 percent better performance, enhanced bit density, improved interface speeds, and better power efficiency compared to previous generations.
Image credit: ASML
It uses a new interface standard, Toggle DDR6.0, which allows for a NAND interface speed of up to 4.8 gigabits per second, up to 33 percent faster than the eighth generation.
