imec Demonstrates Quantum Dot Qubit Device Using High NA EUV

Insider Brief

imec demonstrated a quantum dot qubit device fabricated using High NA EUV lithography, which the company described as a world first.

The silicon quantum dot spin qubit device was produced with gaps as small as 6 nanometers to improve qubit coupling and scalability.

imec said the achievement supports the use of CMOS-compatible semiconductor manufacturing techniques for large-scale quantum computing hardware.

PRESS RELEASE — This week, at ITF World, imec, a world-leading research and innovation hub in advanced semiconductor technologies, presents a world first: a quantum dot qubit device fabricated using High NA EUV lithography. This achievement marks a milestone toward the industrial scaling of more reliable qubits, the basic computational units of quantum computers. To the best of our knowledge, this is the first integrated hardware device created using High NA EUV lithography.