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TSMC and Taiwan researchers engineered an interface only 0.42 nanometers thick to improve next-generation MoS2 transistors
Researchers from Taiwan's National Yang Ming Chiao Tung University (NYCU) and TSMC Corporate Research have developed a new way to improve transistors made from atomically thin materials. They focuses on the tiny boundary where two materials meet, which allowed them to build transistors with an extremely thin insulating layer while maintaining strong electrical performance.
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cryptobriefing.com
TSMC researchers achieve 0.42-nanometer breakthrough in transistor tech
TSMC and NYCU researchers built a MoS₂ transistor with a 0.42 nm interface layer, achieving a key milestone for semiconductor scaling beyond
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timesofindia.indiatimes.com
TSMC and Taiwan researchers engineered an interface only 0.42 nanometers thick to improve next-generation MoS2 transistors
Researchers from Taiwan's National Yang Ming Chiao Tung University (NYCU) and TSMC Corporate Research have developed a new way to improve transistors made from atomically thin…