ChangXin Memory Technologies, China’s largest domestic DRAM producer, has completed R&D verification for LPDDR6 memory chips with design speeds of 12.8 Gbps. That puts the company’s latest offering in the same conversation as products from Samsung, SK Hynix, and Micron, the three firms that have dominated the memory chip market for decades.
The numbers behind the leap
CXMT’s LPDDR6 chips achieve their 12.8 Gbps design speed based on a base speed of 10.7 Gbps using the company’s G4 process node. The chips feature a design density of 16Gb, positioning them as competitive entries in the low-power DRAM segment built specifically for smartphones.
CXMT’s existing LPDDR5X chips already deliver speeds of up to 10,667 Mbps, which aligns with mainstream industry performance from established players.
The company’s Q1 2026 revenue reached approximately $7.5 billion, representing a year-over-year increase of over 700%. CXMT’s market share in the global DRAM market grew to around 8% in Q1 2026, up from 3% the previous year, making it the world’s fourth-largest DRAM maker.
