Defence Research and Development Organisation (DRDO) has made significant strides in semi-conductor technology by developing indigenous methods for producing four-inch Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) up to 150 W, informed chairman and secretary, Department of Defence Research and Development (DDR&D) Samir V. Kamat.
Addressing a gathering on Friday, organised as a curtain raiser for the upcoming Emerging Science, Technology & Innovation Conclave (ESTIC-2025), he underlined the central role of semi-conductors in modern technology ecosystems, powering critical systems in healthcare, communications, transport, defence, and space.
Mr. Kamat highlighted that as global economies move towards deeper digitalisation and automation, semiconductors have become vital to national security, economic progress, and technological sovereignty. Referring to India’s semiconductor journey, the chairman noted that since the launch of the India Semiconductor Mission (ISM) in 2021, the country has transitioned from vision to implementation in just four years.
He reaffirmed the national aspiration to position India among the world’s top three nations in semiconductors by 2036 in the domains of research, innovation, and workforce development.
