Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers
Toshiba Electronic Devices & Storage Corporation ("Toshiba") today started shipping test samples of “TW007D120E,” a 1200V trench-gate SiC MOSFET primarily intended for power supply systems in next-generation AI data centers that is also suitable for use in renewable energy-related equipment.
This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20260520299135/en/ Toshiba: TW007D120E, a 1200V trench-gate SiC MOSFET.
With the rapid expansion of generative AI, increasing power consumption has become a pressing issue for data centers. In particular, the widespread adoption of high-power AI servers and the growing deployment of 800V high-voltage direct current (HVDC) architectures are driving demand for power supply systems with higher power conversion efficiency and power density. Toshiba has addressed these requirements for next-generation AI data centers by developing TW007D120E, which will contribute to lower power consumption and to the miniaturization and higher efficiency of power supply systems.
TW007D120E is built around Toshiba’s proprietary trench-gate structure[1], which achieves industry-leading[2] low On-resistance per unit area (RDS(on)A); it reduces conduction loss through lower On-resistance while simultaneously achieving lower switching loss. Compared with Toshiba’s current products, TW007D120E reduces RDS(on)A by approximately 58%[3] and improves the figure of merit, On-resistance × gate-drain charge (RDS(on) × Qgd), which represents the trade-off between conduction loss and switching loss, by approximately 52%[3]. These characteristics will help to realize highly efficient operation and reduced heat generation in data center power supply systems and contribute to improved overall system efficiency.
